Origin of the energy gap in the narrow-gap semiconductor FeSb2revealed by high-pressure magnetotransport measurements
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چکیده
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15 صفحه اولSemiconductor waveguide inversion in disordered narrow band-gap materials
It has been previously demonstrated that it is possible to form the NOT gate in a coupled semiconductor waveguide structure in III–V materials. However, to this point, investigations have assumed the materials to be perfect. In this article, we present results of a semiconductor waveguide inverter in GaAs and InAs with disordered material effects included in the simulation. The behavior of the ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2013
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.88.165205